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Air‐Stable Cesium Lead Iodide Perovskite for Ultra‐Low Operating Voltage Resistive Switching

Authors: Ji Su Han, Quyet Van Le, Jaeho Choi, Kootak Hong, Cheon Woo Moon, Taemin Ludvic Kim, Hyojung Kim, Soo Young Kim, Ho Won Jang
Publication date: 2018/1
Journal: Advanced Functional Materials
Volume: 28
Issue: 5
Pages: 1705783
CsPbX3 (X = halide, Cl, Br, or I) all‐inorganic halide perovskites (IHPs) are regarded as promising functional materials because of their tunable optoelectronic characteristics and superior stability to organic–inorganic hybrid halide perovskites. Herein, nonvolatile resistive switching (RS) memory devices based on all‐inorganic CsPbI3 perovskite are reported. An air‐stable CsPbI3 perovskite film with a thickness of only 200 nm is successfully synthesized on a platinum‐coated silicon substrate using low temperature all‐solution process. The RS memory devices of Ag/polymethylmethacrylate (PMMA)/CsPbI3/Pt/Ti/SiO2/Si structure exhibit reproducible and reliable bipolar switching characteristics with an ultralow operating voltage (<+0.2 V), high on/off ratio (>106), reversible RS by pulse voltage operation (pulse duration < 1 ms), and multilevel data storage. The mechanical flexibility of the CsPbI3 perovskite RS …

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