Data Storage: Air‐Stable Cesium Lead Iodide Perovskite for Ultra‐Low Operating Voltage Resistive Switching (Adv. Funct. Mater. 5/2018)
17/09/2019/Công bố khoa học/Năm công bố 2018/Hóa học tiên tiến
Authors: Ji Su Han, Quyet Van Le, Jaeho Choi, Kootak Hong, Cheon Woo Moon, Taemin Ludvic Kim, Hyojung Kim, Soo Young Kim, Ho Won Jang
Publication date: 2018/1
Journal: Advanced Functional Materials
Cesium lead iodide (CsPbI3) perovskite, an all‐inorganic halide perovskite, is synthesized on a platinum‐coated silicon substrate for an ultra‐low operating voltage resistive switching memory device by Soo Young Kim, Ho Won Jang, and co‐workers in article number 1705783. An electrochemical metallization mechanism involving metal conducting filaments is proposed to explain the resistive switching behavior which can be applied to next‐generation synaptic devices.