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Antioxidative Activity of Platinum Nanocolloid and Its Protective Effect Against Chemical-Induced Hepatic Cellular Damage

Choi, Mi-Ran; Do, Le Thanh; Chung, Yong-Hoon; Yoo, Hoon; Yu, Rina (2015) Antioxidative Activity of Platinum Nanocolloid and Its Protective Effect Against Chemical-Induced Hepatic Cellular Damage, Journal of Nanoscience and Nanotechnology, 15(8):5571-5576.

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Tuyển chọn vi khuẩn vùng rễ kích thích cây trồng chịu mặn

Võ Thị Phúc Diễm, Nguyễn Thị Chi Phương, Lưu Thị Huyền Trang, Nguyễn Thành Trung (2015) Tuyển chọn vi khuẩn vùng rễ kích thích cây trồng chịu mặn. Tạp chí khoa học và công nghệ, Đại học Duy Tân. 1(14): 1-9

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Ag-doped graphitic carbon nitride photocatalyst with remarkably enhanced photocatalytic activity towards antibiotic in hospital wastewater under solar light

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Potential application of chicken manure biochar towards toxic phenol and 2,4-dinitrophenol in wastewaters

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Phonon-assisted cyclotron resonance in Pöschl-Teller quantum well

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Image Processing-Based Detection of Pipe Corrosion Using Texture Analysis and Metaheuristic-Optimized Machine Learning Approach

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Enhanced endurance organolead halide perovskite resistive switching memories operable under an extremely low bending radius

It was demonstrated that organolead halide perovskites (OHPs) show a resistive switching behavior with an ultralow electric field of a few kilovolts per centimeter. However, a slow switching time and relatively short endurance remain major obstacles for the realization of the next-generation memory. Here, we report a performance-enhanced OHP resistive switching device. To fabricate topologically and electronically improved OHP thin films, we added hydroiodic acid solution (for an additive) in the precursor solution of the OHP. With drastically improved morphology such as small grain size, low peak-to-valley depth, and precise thickness, the OHP thin films showed an excellent performance as insulating layers in Ag/CH3NH3PbI3/Pt cells, with an endurance of over 103 cycles, a high on/off ratio of 106, and an operation speed of 640 μs and without electroforming. We suggest plausible resistive switching and …

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Polarized Light‐Emitting Diodes Based on Patterned MoS2 Nanosheet Hole Transport Layer

Here, this study successfully fabricates few‐layer MoS2 nanosheets from (NH4)2MoS4 and applies them as the hole transport layer as well as the template for highly polarized organic light‐emitting diodes (OLEDs). The obtained material consists of polycrystalline MoS2 nanosheets with thicknesses of 2 nm. The MoS2 nanosheets are patterned by rubbing/ion‐beam treatment. The Raman spectra shows that {poly(9,9‐dioctylfluorene‐alt‐benzothiadiazole), poly[(9,9‐di‐n‐octylfluorenyl‐2,7‐diyl)‐alt‐(benzo[2,1,3]thiadiazol‐4,8‐diyl)]} (F8BT) on patterned MoS2 exhibits distinctive polarization behavior. It is discovered that patterned MoS2 not only improves the device efficiency but also changes the polarization behavior of the devices owing to the alignment of F8BT. This work demonstrates a highly efficient polarized OLED with a polarization ratio of 62.5:1 in the emission spectrum (166.7:1 at the peak intensity of 540 …

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Facile solution synthesis of tungsten trioxide doped with

A facile, highly efficient approach to obtain molybdenum trioxide (MoO 3)-doped tungsten trioxide (WO 3) is reported. An annealing process was used to transform ammonium tetrathiotungstate [(NH 4) 2 WS 4] to WO 3 in the presence of oxygen. Ammonium tetrathiomolybdate [(NH 4) 2 MoS 4] was used as a dopant to improve the film for use in an electrochromic (EC) cell.(NH 4) 2 MoS 4 at different concentrations (10, 20, 30, and 40 mM) was added to the (NH 4) 2 WS 4 precursor by sonication and the samples were annealed at 500 C in air. Raman, X-ray diffraction, and X-ray photoelectron spectroscopy measurements confirmed that the (NH 4) 2 WS 4 precursor decomposed to WO 3 and the (NH 4) 2 MoS 4–(NH 4) 2 WS 4 precursor was transformed to MoO 3-doped WO 3 after annealing at 500 C. It is shown that the MoO 3-doped WO 3 film is more uniform and porous than pure WO 3, confirming the doping quality …

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Control of the Crystal Growth Shape in CH3NH3PbBr3 Perovskite Materials

CH3NH3PbBr3 (MAPbBr3) materials with perovskite structure were grown by a two-step process using Pb(CH3COO)2·3H2O and methyl amine bromide (MABr). By changing the concentration of MABr in isopropyl alcohol (IPA) solvent and the annealing temperature, the shape of CH3NH3PbBr3 materials can be controlled to afford nanocubes, nanowires, nanorods, and wrinkled structures. MAPbBr3 with single cubic structure was obtained at a MABr concentration of 3 mg/mL in IPA, and a nanorod array of MAPbBr3 was realized at a MABr concentration of 9 mg/mL in IPA at room temperature. Uniformly wrinkled shapes were formed after the synthesis temperature was increased to 60 and 90 °C. The X-ray diffraction patterns, Fourier transform infrared spectra, and X-ray photoelectron spectra of CH3NH3PbBr3 nanorods confirmed that the pure perovskite phase was obtained by dipping Pb(CH3COO)2·3H2O in …

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Air‐Stable Cesium Lead Iodide Perovskite for Ultra‐Low Operating Voltage Resistive Switching

CsPbX3 (X = halide, Cl, Br, or I) all‐inorganic halide perovskites (IHPs) are regarded as promising functional materials because of their tunable optoelectronic characteristics and superior stability to organic–inorganic hybrid halide perovskites. Herein, nonvolatile resistive switching (RS) memory devices based on all‐inorganic CsPbI3 perovskite are reported. An air‐stable CsPbI3 perovskite film with a thickness of only 200 nm is successfully synthesized on a platinum‐coated silicon substrate using low temperature all‐solution process. The RS memory devices of Ag/polymethylmethacrylate (PMMA)/CsPbI3/Pt/Ti/SiO2/Si structure exhibit reproducible and reliable bipolar switching characteristics with an ultralow operating voltage (<+0.2 V), high on/off ratio (>106), reversible RS by pulse voltage operation (pulse duration < 1 ms), and multilevel data storage. The mechanical flexibility of the CsPbI3 perovskite RS …

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Low-dimensional halide perovskites: review and issues

Halide perovskites are emerging materials for future optoelectronics and electronics due to their remarkable advantages such as a high light absorption coefficient, long charge carrier diffusion length, facile synthesis method, and low cost. As polycrystalline halide perovskite thin films, which have been studied so far, have crucial limitations, low-dimensional halide perovskites have attracted attention due to their unique optical properties and charge transport properties, which have not been observed before. This review highlights the limitations of polycrystalline halide perovskites thin films and the unique characteristics of low-dimensional halide perovskite nanostructures including their electrical, optical, and chemical properties. After introducing the recent developments of various low-dimensional halide perovskite nanostructures including the synthesis methods, their properties, and applications, a brief overview of …

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Data Storage: Air‐Stable Cesium Lead Iodide Perovskite for Ultra‐Low Operating Voltage Resistive Switching (Adv. Funct. Mater. 5/2018)

Cesium lead iodide (CsPbI3) perovskite, an all‐inorganic halide perovskite, is synthesized on a platinum‐coated silicon substrate for an ultra‐low operating voltage resistive switching memory device by Soo Young Kim, Ho Won Jang, and co‐workers in article number 1705783. An electrochemical metallization mechanism involving metal conducting filaments is proposed to explain the resistive switching behavior which can be applied to next‐generation synaptic devices.

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Low Temperature Solution-Processable Cesium Lead Bromide Microcrystals for Light Conversion

In this report, we present a new approach for the fabrication and application of Cs4PbBr6 microcrystals (Cs4PbBr6 MCs). The Cs4PbBr6 MCs are synthesized via an anti-solvent induced crystallization of PbBr2:CsBr directly in dimethylsulfoxide (DMSO) by introducing HBr (HBr, 48% aqueous solution). The ratio of HBr and DMSO plays a vital role in the formation of Cs4PbBr6. By controlling the HBr/DMSO ratio, pure Cs4PbBr6 or the CsPbBr3 phase can be obtained. The Cs4PbBr6 MCs were initially obtained by adding HBr to CsBr:PbBr2/DMSO. However, on increasing the amount of the added HBr, Cs4PbBr6 MCs were converted to CsPbBr3 MCs and the photoluminescence (PL) disappeared. It was also found that CsPbBr3 MCs can be transformed to Cs4PbBr6 MCs by simply adding DMSO to the dried CsPbBr3 MCs. The Cs4PbBr6 MCs exhibit a strong PL at 516 nm with a full width at half-maximum of 25 nm …

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Improved photocatalytic decomposition of methyl ethyl ketone gas from indoor air environment by using TiO2/graphene oxide

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