Khang D. Pham, Nguyen N. Hieu*, Le M. Bui, Huynh V.Phuc, Bui D.Hoi, Le T.N.Tu, Long G. Bach, Victor V. Ilyasov, Bin Amin, M. Idrees, Chuong V. Nguyen
In this work, we construct the C2N/InSe heterostructure and investigate its electronic properties as well as the effect of strain and electric field. Our results demonstrate that the weak van der Waals interactions are dominated in such heterostructure. It forms the type-II band alignment and implies the spatial separation of photogenerated electron-hole pairs. The type-II band alignment can be switched to type-I one and an indirect to direct band gap transition can be achieved by applying the electric field or vertical strain. Our findings demonstrate that the C2N/InSe heterostructure can be considered to be a good candidate for optoelectronic and nanoelectronic devices.