CH3NH3PbBr3 (MAPbBr3) materials with perovskite structure were grown by a two-step process using Pb(CH3COO)2·3H2O and methyl amine bromide (MABr). By changing the concentration of MABr in isopropyl alcohol (IPA) solvent and the annealing temperature, the shape of CH3NH3PbBr3 materials can be controlled to afford nanocubes, nanowires, nanorods, and wrinkled structures. MAPbBr3 with single cubic structure was obtained at a MABr concentration of 3 mg/mL in IPA, and a nanorod array of MAPbBr3 was realized at a MABr concentration of 9 mg/mL in IPA at room temperature. Uniformly wrinkled shapes were formed after the synthesis temperature was increased to 60 and 90 °C. The X-ray diffraction patterns, Fourier transform infrared spectra, and X-ray photoelectron spectra of CH3NH3PbBr3 nanorods confirmed that the pure perovskite phase was obtained by dipping Pb(CH3COO)2·3H2O in …
CsPbX3 (X = halide, Cl, Br, or I) all‐inorganic halide perovskites (IHPs) are regarded as promising functional materials because of their tunable optoelectronic characteristics and superior stability to organic–inorganic hybrid halide perovskites. Herein, nonvolatile resistive switching (RS) memory devices based on all‐inorganic CsPbI3 perovskite are reported. An air‐stable CsPbI3 perovskite film with a thickness of only 200 nm is successfully synthesized on a platinum‐coated silicon substrate using low temperature all‐solution process. The RS memory devices of Ag/polymethylmethacrylate (PMMA)/CsPbI3/Pt/Ti/SiO2/Si structure exhibit reproducible and reliable bipolar switching characteristics with an ultralow operating voltage (<+0.2 V), high on/off ratio (>106), reversible RS by pulse voltage operation (pulse duration < 1 ms), and multilevel data storage. The mechanical flexibility of the CsPbI3 perovskite RS …
Halide perovskites are emerging materials for future optoelectronics and electronics due to their remarkable advantages such as a high light absorption coefficient, long charge carrier diffusion length, facile synthesis method, and low cost. As polycrystalline halide perovskite thin films, which have been studied so far, have crucial limitations, low-dimensional halide perovskites have attracted attention due to their unique optical properties and charge transport properties, which have not been observed before. This review highlights the limitations of polycrystalline halide perovskites thin films and the unique characteristics of low-dimensional halide perovskite nanostructures including their electrical, optical, and chemical properties. After introducing the recent developments of various low-dimensional halide perovskite nanostructures including the synthesis methods, their properties, and applications, a brief overview of …
Cesium lead iodide (CsPbI3) perovskite, an all‐inorganic halide perovskite, is synthesized on a platinum‐coated silicon substrate for an ultra‐low operating voltage resistive switching memory device by Soo Young Kim, Ho Won Jang, and co‐workers in article number 1705783. An electrochemical metallization mechanism involving metal conducting filaments is proposed to explain the resistive switching behavior which can be applied to next‐generation synaptic devices.
In this report, we present a new approach for the fabrication and application of Cs4PbBr6 microcrystals (Cs4PbBr6 MCs). The Cs4PbBr6 MCs are synthesized via an anti-solvent induced crystallization of PbBr2:CsBr directly in dimethylsulfoxide (DMSO) by introducing HBr (HBr, 48% aqueous solution). The ratio of HBr and DMSO plays a vital role in the formation of Cs4PbBr6. By controlling the HBr/DMSO ratio, pure Cs4PbBr6 or the CsPbBr3 phase can be obtained. The Cs4PbBr6 MCs were initially obtained by adding HBr to CsBr:PbBr2/DMSO. However, on increasing the amount of the added HBr, Cs4PbBr6 MCs were converted to CsPbBr3 MCs and the photoluminescence (PL) disappeared. It was also found that CsPbBr3 MCs can be transformed to Cs4PbBr6 MCs by simply adding DMSO to the dried CsPbBr3 MCs. The Cs4PbBr6 MCs exhibit a strong PL at 516 nm with a full width at half-maximum of 25 nm …
In this research, we investigate the effect of metal doping on the electrochromic (EC) performance of tungsten trioxide (WO3) films. These films were prepared by a novel method involving solution processing and thermal annealing. In this procedure, ammonium tetrathiotungstate ((NH4)2WS4) was dissolved in dimethylformamide at a high concentration ratio (200 mg mL−1) to obtain a homogeneous solution and then spin-coated onto the indium thin oxide (ITO) substrate for use as a working electrode. Subsequently, the film was annealed at the different temperatures (200, 300, 400, and 500 °C) to form a crystal structure of WO3. X-ray diffraction, Raman, and X-ray photoelectron spectroscopic results confirm the crystal formation of WO3. Moreover, in order to improve the electrochromic performance, different concentrations (10, 20, 30, and 40 mM) of different metal chlorides such as PtCl4, PdCl2, AuCl3, AgCl …
Organic–inorganic halide perovskite materials have attracted significant attention during the last few years because of their superior properties for electronic and optoelectronic devices, such as their long charge‐carrier diffusion lengths and high photoluminescence quantum yields of up to 100% with tunable bandgaps over the entire visible spectral range. In addition to solar cells, light‐emitting diodes represent a fascinating application for halide perovskite materials. Here, the recent progress relating to halide perovskite LEDs is reviewed. The current strategies for improving the performance of halide LEDs, focusing on morphological engineering, dimensional engineering, compositional engineering, surface passivation, interfacial engineering, and the plasmonic effect are discussed. The challenges and perspectives for the future development of halide perovskite LEDs are also considered.
We demonstrate a facile and efficient method for the synthesis of a metal-doped WS2nanoflower (NF) catalyst. We also report its application for the electrocatalytic hydrogen evolution reaction (HER). The flower-like WS2 particles were produced by a hydrothermal reaction, and, subsequently, the WS2 was doped with metal chlorides such as AuCl3, AgCl, PtCl2, and PdCl2, followed by reduction with sodium borohydride to form metal-doped WS2 NFs. The Pd-doped WS2 NF catalyst showed a high HER performance, having a Tafel slope of 54 mV/dec and an overpotential of -175 mV at −10 mA cm−2. The improvement is attributed to the energy band alignment near the H+/H2reduction potential and the large surface area of the WS2 NFs.
Nanocrystal quantum dots (QDs) provide tunable optoelectronic properties on the basis of their dimension. CdSe QDs, which are size-dependent colloidal nanocrystals, are used for efficient electrochromic devices owing to their unique properties in modulating quantum confinement, resulting in enhanced electron insertion during the electrochromic process. Incorporating a well-known metal oxide electrochromic material such as WO3 into CdSe QDs enhances the redox process. Herein, we propose a facile method for producing and optimizing CdSe QDs doped in WO3. The fabrication of the electrochromic film involves a solution and annealing process. Moreover, the effect of the QD size to optimize the electrochromic layer is studied. As a result, the coloration efficiency of WO3 and optimized CdSe QD–WO3 are obtained as 68.6 and 112.3 cm2/C, respectively. Thus, size-tunable nanocrystal QDs combined with a …
