Personnel
Overview
Working position: Directorate Board (Personnel)
Academic Title/Degree: PhD
Position: Director
Academic curriculum vitae
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2006-2009
Academic Title/Degree: Dr.
Unversity/School/Institue: Belarusian State University, Belarus
Academic Discipline: Physics
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1997-2001
Academic Title/Degree: Bachelor
Academic Discipline: Physics
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2018 - Nay
Unit: Sirindhorn International Institute of Technology
Working position: Giám đốc
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2010 - 2011
Unit: Đại học Bắc Carolina
Working position: Nghiên cứu viên sau tiến sĩ
- Hieu Nguyen Ngoc. Raman response, piezoelectricity, and transport properties of the two-dimensional Janus HfSiX3H (X = N/P/As) semiconductors: A first-principles study, PHYSICAL REVIEW B - P.235403. 2024
- Hieu Nguyen Ngoc. Unveiling Versatile Electronic Properties and Contact Features of Metal−Semiconductor Graphene/γ-Ge2SSe van der Waals Heterostructures, Langmuir - P.20783. 2024
- Hieu Nguyen Ngoc. Enhanced out-of-plane piezoelectricity and carrier mobility in Janus c-Sn2XY (X /Y5S, Se, Te) monolayers: A first-principles prediction, - P.061601. 2023
- Hieu Nguyen Ngoc. Negative Poisson’s ratio and anisotropic carrier mobility in ternary Janus Si2XY (X/Y = S, Se, Te): First-principles prediction, Applied Physics Letters - P.092102. 2023
- Hieu Nguyen Ngoc. Raman activity and high electron mobility of piezoelectric semiconductor GaSiX2 (X = N, P, and As) toward flexible nanoelectronic devices, Journal of Physics D: Applied Physics - P.105309. 2025
- Hieu Nguyen Ngoc. Landau levels and magneto-optical responses inWeyl semimetal quantum wells in a non-uniform magnetic field, - P.075412. 2022
- Hieu Nguyen Ngoc. Structural, electronic, and transport properties of quintuple atomic Janus monolayers Ga2SX2 (X = O, S, Se, Te): First-principles predictions, - P.075402 . 2022
- Hieu Nguyen Ngoc. Novel Janus group III chalcogenide monolayers Al2XY2 (X/Y = S, Se, Te): first-principles insight onto the structural, electronic, and transport properties, Journal of Physics: Condensed Matter - P.115601. 2022
- Hieu Nguyen Ngoc. Oxygenation of Janus group III monochalcogenides: First-principles insights into GaInXO (X = S, Se, Te) monolayers, - P.115410. 2021
- Hieu Nguyen Ngoc. Oscillations of the electron energy loss rate in two-dimensional transition-metal dichalcogenides in the presence of a quantizing magnetic field, PHYSICAL REVIEW B - P.235417. 2021
- Hieu Nguyen Ngoc. Theoretical prediction of electronic, transport, optical, and thermoelectric properties of Janus monolayers In2XO (X = S, Se, Te), - P.085422. 2021